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Product Detailed Parameters
- Description：PFET, 38A I(D), 55V, 0.03OHM, 1-
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：30mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1152 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：88W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK7230-55A,118 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a DPAK (SOT428) plastic package. Designed for automotive critical applications, it complies with AEC-Q101 standards and supports junction temperatures up to 175 °C. Key electrical parameters include a drain-source voltage of 55 V, a continuous drain current of 38 A at 25 °C mounting base temperature, and a maximum total power dissipation of 88 W. The device features a typical on-state resistance of 26 mΩ at 25 °C and 60 mΩ at 175 °C, ensuring low conduction losses.
Feature Summary
- Low conduction losses achieved through low on-state resistance
- Qualified for automotive critical applications via AEC-Q101 compliance
- Compatible with standard level gate drive sources
- Operates in thermally demanding environments with a 175 °C rating
Applications
- 12 V and 24 V loads
- Automotive and general purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets the necessary AEC-Q101 qualification requirements for your target automotive application. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values under expected operating conditions.
Selection Notes
Select this component when designing circuits requiring robust N-channel switching with high current capabilities up to 38 A. It is suitable for applications needing compatibility with standard logic-level gate drives while maintaining performance in high-temperature automotive environments. Consider the DPAK package constraints for PCB layout and thermal dissipation strategies.
Part Context
This part belongs to Nexperia's portfolio of standard level N-channel TrenchMOS FETs. These devices are engineered for efficiency and reliability in power switching roles. The product line emphasizes automotive-grade durability, making it appropriate for systems where long-term stability and resistance to thermal stress are critical design factors.
Replacement Considerations
Consult official Nexperia documentation or distributor databases for verified equivalent parts. Ensure any substitute maintains identical pinout, voltage ratings, and thermal characteristics.
