BUK7506-55B,127

$0.84

Description：MOSFET N-CH 55V 75A TO220AB
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tube

SKU:0579e40577d8 Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 75A TO220AB
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：64 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5100 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：254W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK7506-55B,127

Overview

The BUK7506-55B is an N-channel TrenchMOS standard level FET designed for automotive critical applications. It features a drain-source voltage of 55 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 5.16 mΩ at 25 °C and supports a total power dissipation of 254 W. It operates with junction temperatures up to 175 °C and includes non-repetitive avalanche energy capability of 680 mJ.

Feature Summary

Low conduction losses due to low on-state resistance
Q101 compliant for automotive reliability
Suitable for standard level gate drive sources
Operates in thermally demanding environments with a 175 °C rating

Applications

12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the current product status directly with Nexperia or authorized distributors, as business transitions may affect availability. Confirm that the TO-220AB package matches your thermal management requirements. Ensure gate drive circuits align with the standard level specifications. Check for any specific automotive qualification documentation required for your final assembly process.

Selection Notes

Select this component when designing circuits requiring robust N-channel switching with high current capabilities. The TO-220AB package facilitates effective heat sinking for high-power applications. Consider the 55 V breakdown voltage and 75 A current limits to ensure adequate headroom for your specific load conditions and transient events.

Part Context

This part belongs to the N-channel TrenchMOS family from Nexperia, formerly NXP Standard Products. It utilizes TrenchMOS technology to achieve low on-state resistance. The product is qualified to AEC standards, making it suitable for critical automotive electronics where reliability under varying thermal conditions is essential.

Replacement Considerations

Check for direct equivalents within the BUK75 series or other N-channel MOSFETs with similar 55 V ratings and TO-220AB packaging. Verify pinout compatibility and thermal resistance values before substitution.