BUK7511-55B,127

$0.44

Description：MOSFET N-CH 55V 75A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:a9f8cd842872 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 75A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：11mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：37 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2604 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：157W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK7511-55B,127

Overview

The BUK7511-55B,127 is an N-channel TrenchMOS standard level Field-Effect Transistor (FET) manufactured by Nexperia. It utilizes plastic packaging and TrenchMOS technology for enhanced performance. The device is designed as a standard level N-channel enhancement mode FET suitable for automotive critical applications, having been designed and qualified to the appropriate AEC-Q101 standard. Key electrical characteristics include a drain-source voltage of 55V and a continuous drain current of 11A. It features low on-state resistance to minimize conduction losses and supports operation in thermally demanding environments with a maximum junction temperature rating of 175°C.

Feature Summary

Compliant with AEC-Q101 standards for automotive reliability
Low conduction losses achieved through low on-state resistance
Compatible with standard level gate drive sources
Capable of operation in thermally demanding environments up to 175°C

Applications

12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify component authenticity and datasheet alignment before integration. Confirm that the specific suffix matches project requirements. Check current lifecycle status as availability may vary. Ensure thermal management designs accommodate the specified operating limits. Validate compatibility with existing gate drive circuits.

Selection Notes

Select this component for applications requiring robust automotive-grade N-channel MOSFETs. Consider its suitability for standard level gate drives and high-temperature environments. Evaluate the trade-off between low on-resistance and package thermal performance. Ensure the 55V rating aligns with system voltage requirements.

Part Context

This part belongs to Nexperia's TrenchMOS family, which employs advanced trench gate technology to reduce on-state resistance. The series is engineered for efficiency in power switching applications. The specific model integrates features optimized for automotive use, ensuring reliability under strict industry standards.