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The BUK7520-55A,127 is an N-channel TrenchMOS standard level FET in a TO-220AB plastic package (SOT78). It features a drain-source voltage of 55 V and a continuous drain current of 54 A at 25 °C mounting base temperature. The device supports a total power dissipation of 118 W under the same conditions. Key electrical parameters include a maximum on-state resistance of 40 mΩ at 175 °C junction temperature and a non-repetitive avalanche energy rating of 115 mJ. The component is qualified to AEC-Q101 standards for automotive applications.
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Select this component for high-current switching applications requiring robust thermal performance and automotive qualification. Ensure the gate drive source matches the standard level requirements. Verify that the mounting base temperature does not exceed limits defined in the normalized current curves. Consider the TO-220AB package constraints for heatsinking and mechanical integration within the target assembly.
This part belongs to the Nexperia BUK75xx series of N-channel TrenchMOS FETs. These devices utilize TrenchMOS technology to achieve low on-state resistance. The series is designed for automotive and industrial power switching. The BUK7520-55A specifically targets 55 V systems with high current capabilities.
Check datasheets for alternative parts like BUK7620-55A or BUK7509-55A. Verify pinout compatibility, package dimensions, and electrical ratings such as RDSon and VDS before substitution.
The maximum junction temperature is 175 °C.
Yes, it is designed and qualified to the AEC-Q101 standard for use in automotive critical applications.