BUK7524-55A,127

Description：MOSFET N-CH 55V 47A TO220AB
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tube

SKU:dae4b810fdc9 Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 47A TO220AB
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：24mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1310 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：106W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK7524-55A,127

Overview

The BUK7524-55A is an N-channel enhancement mode power MOSFET utilizing TrenchMOS technology, designed for low on-state resistance. It features a 55V drain-source voltage rating and supports up to 47A continuous DC drain current at 25°C mounting base temperature. The device operates with a junction temperature range of -55°C to +175°C and includes an integrated source-drain diode. Key electrical characteristics include a maximum RDS(on) of 24mΩ at 25°C and 48mΩ at 175°C under specified gate drive conditions.

Feature Summary

TrenchMOS technology for enhanced performance
Q101 compliant automotive qualification
High thermal stability rated up to 175°C
Standard level gate compatibility

Applications

Automotive power switching for 12V loads
General purpose power switching for 24V loads
Motor control applications
Lamp driving circuits
Solenoid actuation systems

Procurement Notes

Verify the component origin carefully as the standard product business was transferred to Nexperia in February 2017. Ensure documentation references align with current manufacturer standards. Confirm package type availability matches specific design requirements, as variants exist for through-hole and surface mount implementations. Validate that sourcing channels provide authentic parts consistent with the original Philips/NXP specifications.

Selection Notes

Select this component for designs requiring robust N-channel switching with high current capabilities. Consider the thermal resistance values when designing heat sinking solutions for the TO-220AB package. Evaluate the gate threshold voltage characteristics against your driver circuit output levels. Ensure the operating environment stays within the specified junction temperature limits to maintain reliability and performance over the product lifecycle.

Part Context

This device belongs to the TrenchMOS standard level FET family, originally developed by Philips Semiconductors. It represents a mature power semiconductor solution leveraging trench gate architecture for efficiency. The product line has been maintained through corporate transitions, ensuring continuity for legacy and new industrial designs requiring reliable discrete power switching components.