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Product Detailed Parameters
- Description：PFET, 47A I(D), 100V, 0.028OHM,
- Series：*
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The BUK7528-100A is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a TO-220AB plastic package. Designed for automotive critical applications, it meets AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 100 V and a continuous drain current of 47 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 28 mΩ at 25 °C and 76 mΩ at 175 °C. Total power dissipation reaches 166 W at 25 °C, with a non-repetitive avalanche energy rating of 45 mJ.
Feature Summary
- Compliant with AEC-Q101 standards for automotive critical applications
- Utilizes TrenchMOS technology to achieve low conduction losses through reduced on-state resistance
Applications
- Automotive power switching
- General purpose power switching
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component status aligns with current production requirements. Ensure compatibility with existing thermal management designs given the TO-220AB package constraints. Cross-reference the datasheet revision date against design specifications to account for any potential updates in limiting values or characteristics.
Selection Notes
Select this component when high current handling and robustness in automotive environments are required. The standard level gate drive simplifies control circuitry integration. Consider the thermal resistance from junction to mounting base for heatsink sizing. Evaluate the avalanche ruggedness if the application involves inductive load switching without external clamping.
Part Context
This part belongs to Nexperia's (formerly NXP) TrenchMOS family of standard level N-channel MOSFETs. It is specifically engineered for high-performance automotive systems requiring reliability under demanding thermal conditions. The TO-220AB package facilitates direct heatsinking, distinguishing it from surface-mount alternatives in the same series.
Replacement Considerations
Consult official substitution lists for verified equivalents. Generic replacements may not match the AEC-Q101 qualification or specific thermal characteristics.
