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Product Detailed Parameters
- Description：NEXPERIA BUK752R3-40E - 120A, 40
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：120A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：2.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：109.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：293W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK752R3-40E is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in a TO-220AB (SOT78A) package. It features a drain-source voltage of 40 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device supports a total power dissipation of 293 W under the same conditions. Key electrical parameters include a maximum on-state resistance of 2.3 mΩ at 25 °C and 4.4 mΩ at 175 °C, with a gate threshold voltage exceeding 1 V at high temperatures.
Feature Summary
- Compliant with AEC-Q101 automotive qualification standards for high-performance applications.
- Rated for repetitive avalanche energy to withstand rugged switching conditions.
- Operates reliably in thermally demanding environments with a junction temperature rating up to 175 °C.
- Features true standard level gate characteristics ensuring stable threshold voltage above 1 V at elevated temperatures.
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix matches the required package variant, as the datasheet specifies the SOT78A version. Confirm that the application design accounts for the thermal resistance from junction to mounting base when calculating heat sink requirements. Ensure the input drive voltage aligns with the standard level gate specifications to achieve the rated on-state resistance values provided in the static characteristics tables.
Selection Notes
Select this component for designs requiring robust automotive-grade reliability and high current handling capabilities within a 40 V system. The TO-220AB package facilitates direct heatsink mounting, making it suitable for applications where efficient thermal management is critical. Consider the repetitive avalanche rating if the circuit topology involves inductive loads or potential voltage spikes during switching transitions.
Part Context
This device belongs to Nexperia's TrenchMOS family, which employs advanced planar trench technology to optimize the trade-off between on-resistance and switching performance. The BUK752R3-40E specifically targets the standard level gate segment, offering compatibility with conventional logic drivers while maintaining low conduction losses typical of modern power MOSFET architectures designed for automotive durability.
Replacement Considerations
Direct substitutes must match the 40 V rating, 120 A current capacity, and TO-220AB package. Verify that any alternative device meets AEC-Q101 qualifications if automotive compliance is mandatory. Check pinout compatibility and thermal resistance specifications to ensure equivalent performance in existing board layouts without redesigning the cooling infrastructure.
