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Product Detailed Parameters
- Description：MOSFET N-CH 30V 75A TO220AB
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：91 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6212 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK752R7-30B is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a TO-220AB plastic package. Designed for automotive critical applications, it features a drain-source voltage of 30 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 2.7 mΩ at 25 °C and supports junction temperatures up to 175 °C with a total power dissipation of 300 W.
Feature Summary
- Low conduction losses achieved through low on-state resistance
- Qualified for automotive critical applications per Q101 standards
- Compatible with standard level gate drive sources
- Operates in thermally demanding environments with a 175 °C rating
Applications
- 12 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the current product status as the original manufacturer's Standard Product business transitioned to Nexperia. Confirm that ordering suffixes do not alter functional specifications without explicit documentation. Ensure compatibility with existing thermal management designs given the package limitations on continuous current.
Selection Notes
Select this component for high-current switching applications requiring robust thermal performance. The TO-220AB package facilitates heatsink mounting for effective heat dissipation. Verify that the gate drive circuitry aligns with standard level requirements to ensure optimal switching characteristics and minimize conduction losses.
Part Context
This N-channel MOSFET belongs to the TrenchMOS family, engineered for efficiency in power conversion. Originally documented under NXP Semiconductors, the product portfolio was transferred to Nexperia. It serves as a reliable solution for automotive and industrial power management where durability and low loss are critical.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters, package dimensions, and thermal characteristics to ensure seamless integration without design modification.
