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The BUK7535-100A,127 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a TO-220AB plastic package. Designed for automotive critical applications, it complies with AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 100 V and a continuous drain current of 41 A at 25 °C mounting base temperature. The device features a maximum on-state resistance of 88 mΩ at 175 °C junction temperature and supports a total power dissipation of 149 W. It offers a non-repetitive avalanche energy rating of 110 mJ and operates within a junction temperature range of -55 °C to 175 °C.
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Select this component for high-current switching applications requiring robust thermal performance and automotive qualification. Ensure the gate drive circuitry aligns with standard level requirements to fully utilize the device's low on-state resistance characteristics. Consider the TO-220AB package constraints for heatsinking and mechanical mounting when designing the application board or chassis.
This part belongs to Nexperia's (formerly NXP Semiconductors) TrenchMOS family of standard level N-channel MOSFETs. The series is engineered for high-performance power switching in automotive systems. The BUK7535-100A variant specifically targets applications needing 100 V breakdown voltage with high current handling capabilities in a through-hole package suitable for direct heatsink mounting.
Publicly confirmed substitute part numbers are not available in the provided documentation.