BUK7535-100A,127

BUK7535-100A,127

$0.44
  • Description:MOSFET N-CH 100V 41A TO220AB
  • Series:*
  • Mfr:Nexperia USA Inc.
  • Package:Tube

SKU:83c62e7a81fc Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 100V 41A TO220AB
  • Series:*
  • Mfr:Nexperia USA Inc.
  • Package:Tube
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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BUK7535-100A,127

Overview

The BUK7535-100A,127 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a TO-220AB plastic package. Designed for automotive critical applications, it complies with AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 100 V and a continuous drain current of 41 A at 25 °C mounting base temperature. The device features a maximum on-state resistance of 88 mΩ at 175 °C junction temperature and supports a total power dissipation of 149 W. It offers a non-repetitive avalanche energy rating of 110 mJ and operates within a junction temperature range of -55 °C to 175 °C.

Feature Summary

  • Compliant with AEC-Q101 standards for automotive critical applications
  • Low conduction losses achieved through low on-state resistance
  • Compatible with standard level gate drive sources
  • Suitable for thermally demanding environments due to 175 °C rating

Applications

  • 12 V, 24 V and 42 V loads
  • Automotive and general purpose power switching
  • Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for high-current switching applications requiring robust thermal performance and automotive qualification. Ensure the gate drive circuitry aligns with standard level requirements to fully utilize the device's low on-state resistance characteristics. Consider the TO-220AB package constraints for heatsinking and mechanical mounting when designing the application board or chassis.

Part Context

This part belongs to Nexperia's (formerly NXP Semiconductors) TrenchMOS family of standard level N-channel MOSFETs. The series is engineered for high-performance power switching in automotive systems. The BUK7535-100A variant specifically targets applications needing 100 V breakdown voltage with high current handling capabilities in a through-hole package suitable for direct heatsink mounting.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.

BUK7535-100A,127BUK7535-100A,127
$0.44
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