BUK754R3-40B,127

$0.98

Description：PFET, 75A I(D), 40V, 0.0043OHM,
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:8d9da5187e7f Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：PFET, 75A I(D), 40V, 0.0043OHM,
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：69 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4.824 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：254W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK754R3-40B,127

Overview

The BUK754R3-40B is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a TO-220AB plastic package. Designed for automotive critical applications, it meets AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 40 V and a continuous drain current of 75 A at a mounting base temperature of 25 °C. The device exhibits a maximum on-state resistance of 4.3 mΩ at 25 °C and 8.1 mΩ at 175 °C. Total power dissipation reaches 254 W at 25 °C mounting base temperature, with a junction temperature range spanning from -55 °C to 175 °C.

Feature Summary

AEC-Q101 compliant for automotive critical applications
Low conduction losses due to low on-state resistance
Suitable for standard level gate drive sources
Operates in thermally demanding environments up to 175 °C

Applications

12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and tape/reel specifications. Ensure the component matches the required thermal management capabilities for the intended application environment. Cross-reference the datasheet revision date to confirm the most current electrical characteristics and limiting values are applied during design validation.

Selection Notes

Select this component when a robust N-channel MOSFET with high current handling capability is required for automotive or industrial environments. The TO-220AB package facilitates direct heatsink mounting for effective thermal management. Consider the standard level gate drive compatibility if interfacing with common logic-level drivers without complex gate circuitry. Evaluate the avalanche energy rating if the application involves inductive load switching.

Part Context

This part belongs to the BUK75 series of N-channel TrenchMOS FETs from Nexperia. The series utilizes advanced trench gate technology to achieve low on-resistance within plastic packages. These devices are engineered specifically for high-performance automotive applications, ensuring reliability under strict environmental conditions while maintaining cost-effectiveness for mass production scenarios.