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Product Detailed Parameters
- Description：MOSFET N-CH 100V 120A TO220AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：5.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：180 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：11810 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：349W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK755R4-100E is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in a TO-220AB (SOT78A) package. It features a drain-source voltage of 100 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device has a maximum on-state resistance of 5.2 mΩ at 25 A and 10 V gate drive. Total power dissipation reaches 349 W at 25 °C. It operates within a junction temperature range of -55 °C to 175 °C and is qualified to the AEC-Q101 standard for automotive applications.
Feature Summary
- Compliant with AEC-Q101 standards for high-performance automotive environments
- Rated for repetitive avalanche operation to handle demanding switching conditions
- Maintains true standard level gate threshold characteristics above 1 V at 175 °C
- Designed for thermally demanding applications with a 175 °C junction rating
Applications
- 12V, 24V and 48V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and tape/reel specifications. Ensure the component meets the required AEC-Q101 qualification status for the intended automotive application. Cross-reference the datasheet revision date with current production status to confirm availability and any potential design changes or obsolescence notices prior to finalizing procurement.
Selection Notes
Select this component for high-current switching applications requiring robust thermal performance and automotive reliability. The TO-220AB package facilitates heatsink mounting for effective heat dissipation in power-intensive circuits. Consider the 100 V drain-source voltage and 120 A current capacity when designing for motor drives or heavy-duty load switching. Verify that the gate drive circuitry supports the standard level threshold requirements across the full operating temperature range.
Part Context
This part belongs to the BUK75 series of N-channel TrenchMOS FETs from Nexperia. These devices are engineered for high-efficiency power switching in automotive and industrial sectors. The series emphasizes low conduction losses and ruggedness, making them suitable for critical power management tasks where reliability under extreme thermal and electrical stress is paramount.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Ensure any replacement matches the TO-220AB footprint, 100 V rating, and current handling capabilities. Verify compatibility with existing gate drive voltages and thermal management solutions before implementing a substitute component.
