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Product Detailed Parameters
- Description：MOSFET N-CH 55V 19.7A TO220AB
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：19.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：75mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：61W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK7575-55,127 is an N-channel enhancement mode standard level field-effect power transistor manufactured by Nexperia using TrenchMOS technology. It features a TO-220AB plastic envelope with the drain tab connected to pin 2. Key electrical parameters include a maximum drain-source voltage (VDS) of 55 V and a continuous DC drain current (ID) of 19.7 A at 25 °C case temperature. The device exhibits a typical on-state resistance (RDS(ON)) of 60 mΩ at VGS = 10 V and ID = 10 A. Total power dissipation is rated at 61 W at 25 °C, with a junction temperature range up to 175 °C.
Feature Summary
- Utilizes TrenchMOS technology for low on-state resistance
- Integrates internal Zener diodes for ESD protection up to 2 kV
- Features a TO-220AB package with direct thermal coupling via the drain tab
Applications
- Automotive switching applications
- General purpose switching circuits
Procurement Notes
Verify component authenticity through official Nexperia channels or authorized distributors. Confirm the datasheet revision matches the manufacturing date code. Ensure proper handling precautions are observed due to electrostatic discharge sensitivity. Check for any specific automotive qualification certifications required for the target application environment.
Selection Notes
Select this component for designs requiring robust N-channel switching with moderate voltage ratings. Consider the thermal resistance characteristics when designing heat sinks for high-power dissipation scenarios. Evaluate the gate threshold voltage requirements against the driving circuit capabilities to ensure reliable turn-on under varying temperature conditions.
Part Context
This part belongs to the BUK75xx series of N-channel Power MOSFETs from Nexperia. These devices are designed for general-purpose and automotive applications where reliability and low conduction losses are critical. The TO-220AB package provides efficient thermal management for medium-power applications.
Replacement Considerations
Direct substitutes may include other 55 V N-channel MOSFETs in TO-220 packages with comparable RDS(ON) and current ratings. Verify pinout compatibility and thermal resistance specifications before substitution.
