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Product Detailed Parameters
- Description：MOSFET N-CH 40V 75A TO220AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7.4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1730 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：96W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK758R3-40E is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in a TO-220AB (SOT78A) plastic package. Designed for high-performance automotive applications, it meets AEC-Q101 standards and supports junction temperatures up to 175 °C. Key electrical parameters include a drain-source voltage of 40 V, a continuous drain current of 75 A at 25 °C mounting base temperature, and a total power dissipation of 96 W. The device features a typical on-state resistance of 5.8 mΩ at 10 V gate drive and 20 A drain current.
Feature Summary
- Compliant with AEC-Q101 qualification standards for automotive reliability
- Rated for repetitive avalanche energy operation
- Maintains true standard level gate threshold above 1 V at maximum junction temperature
- Engineered for thermal demanding environments with 175 °C capability
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging configuration. Ensure the component matches the required SOT78A package variant. Confirm that the product status aligns with current production availability before finalizing design-in decisions.
Selection Notes
Select this component when a robust N-channel MOSFET is required for 40 V automotive circuits. It is suitable for designs needing high current handling in a through-hole package. Verify that the gate drive voltage supports the standard level threshold characteristics for optimal conduction performance.
Part Context
This part belongs to the BUK75 series of N-channel TrenchMOS FETs from Nexperia. These devices are engineered for general-purpose power switching in automotive environments. The series emphasizes ruggedness and thermal stability, making them appropriate for applications requiring reliable operation under varying load conditions.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinouts and thermal characteristics carefully when considering equivalent packages.
