BUK7606-55B,118

$2.01

Description：MOSFET N-CH 55V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ecb9c5bfcffa Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：64 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5100 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：254W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK7606-55B,118

Overview

The BUK7606-55B,118 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK (SOT404) plastic package. Designed for automotive critical applications, it features a drain-source voltage of 55 V and a continuous drain current of 75 A at a mounting base temperature of 25 °C. The device exhibits a maximum on-state resistance of 5.16 mΩ at 25 °C and supports junction temperatures up to 175 °C. It includes an internal source-drain diode with a reverse recovery time of 73 ns.

Feature Summary

Compliant with AEC-Q101 standards for automotive reliability
Low conduction losses enabled by low on-state resistance
Compatible with standard level gate drive sources
Operates in thermally demanding environments with a 175 °C rating

Applications

12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing circuits requiring robust N-channel switching with high current handling capabilities in automotive or industrial settings. Ensure the thermal management design accommodates the specified junction-to-mounting base thermal resistance to maintain operation within the 175 °C limit under expected load conditions.

Part Context

This part belongs to Nexperia's BUK76xx series of N-channel TrenchMOS FETs. These devices are engineered for high-efficiency power switching applications where low on-resistance and high current density are critical. The D2PAK package provides a balance between thermal performance and surface-mount convenience for PCB integration.

Replacement Considerations

Consult official Nexperia documentation for verified cross-reference part numbers before substitution. Ensure any replacement matches the pinout, voltage ratings, and thermal characteristics of the original specification.