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Product Detailed Parameters
- Description：MOSFET N-CH 75V 75A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：5.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：91 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7446 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK7606-75B is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a SOT404 (D2PAK) plastic package. Qualified to AEC-Q101 standards for automotive applications, it features a drain-source voltage of 75 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 5.6 mΩ at 25 °C and supports junction temperatures up to 175 °C with a total power dissipation rating of 300 W.
Feature Summary
- AEC-Q101 compliant for automotive critical applications
- Low conduction losses due to low on-state resistance
- Suitable for standard level gate drive sources
- Operates in thermally demanding environments with a 175 °C rating
Applications
- 12 V, 24 V and 42 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix matches the required package variant and tape/reel configuration. Confirm that the component status remains active or available through authorized Nexperia channels. Ensure design compliance with the provided absolute maximum ratings and thermal management requirements for the SOT404 package.
Selection Notes
Select this component for high-current switching applications requiring automotive qualification. The standard level gate threshold simplifies driver interface compatibility. Evaluate thermal resistance characteristics against the expected mounting base temperature to ensure operation within the specified junction temperature limits.
Part Context
This part belongs to the Nexperia BUK76 series of N-channel TrenchMOS FETs. It is designed for robust performance in automotive environments, offering high avalanche ruggedness and reliable switching capabilities. The D2PAK package provides efficient heat dissipation for power handling.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters, package type, and automotive qualification status.
