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Product Detailed Parameters
- Description：MOSFET N-CH 55V 75A D2PAK
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：62 nC @ 0 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3271 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：211W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK7609-55A,118 is an N-channel TrenchMOS standard level field-effect transistor manufactured by NXP Semiconductors. It is a power MOSFET designed for high-current switching applications. The device features a maximum drain-source voltage of 55 V and a continuous drain current rating of 75 A at 25 °C case temperature. It utilizes a D2PAK surface-mount package to facilitate efficient thermal management in compact designs.
Feature Summary
- Utilizes TrenchMOS technology for optimized on-resistance and switching performance
- Designed for robust operation with low gate charge characteristics
- Capable of handling high continuous drain currents in surface-mount configurations
Applications
- General load switching circuits
- DC-DC converter output stages
- Motor driver bridge circuits
Procurement Notes
Verify the specific suffix '118' corresponds to the tape-and-reel packaging format required for automated assembly processes. Confirm that the component meets RoHS compliance standards as indicated by the JESD-609 code e3. Ensure the ordering part number matches the exact voltage and current ratings needed for the target application design specifications.
Selection Notes
Select this component when a 55 V breakdown voltage and 75 A current capacity are required in a D2PAK package. Consider the thermal resistance characteristics of the package for heat dissipation requirements. Evaluate the gate charge parameters against the driving capability of the control circuitry to ensure efficient switching transitions.
Part Context
This component belongs to the BUK7609 series of N-channel TrenchMOS standard level FETs from NXP Semiconductors. The series is engineered for general-purpose power switching applications requiring high efficiency and reliability. The '118' suffix typically denotes the specific reel packaging configuration used for manufacturing integration.
Replacement Considerations
Direct replacements must match the 55 V / 75 A specification and D2PAK footprint. Verify pinout compatibility and thermal performance metrics before substitution.
