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Product Detailed Parameters
- Description：MOSFET N-CH 100V 75A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6773 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK7610-100B is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology, designed for automotive critical applications. It features a drain-source voltage of 100 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 8.6 mΩ at 25 °C and supports a total power dissipation of 300 W. It operates with junction temperatures up to 175 °C and includes an integrated source-drain diode.
Feature Summary
- Low conduction losses achieved through low on-state resistance
- Qualified for automotive critical applications per AEC-Q101 standards
- Compatible with standard level gate drive sources
- Operates in thermally demanding environments with a 175 °C rating
Applications
- 12 V, 24 V and 42 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix matches the required package variant. Confirm that the component status remains active for new designs by checking the latest Nexperia documentation. Ensure the application environment respects the absolute maximum ratings for thermal and electrical stress to maintain reliability.
Selection Notes
Select this component for high-current switching applications requiring robust avalanche ruggedness and low static power consumption. The D2PAK package provides efficient heat dissipation for power densities up to 300 W. Verify gate drive compatibility with standard logic levels before integration into the circuit design.
Part Context
This part belongs to the Nexperia BUK76 series of N-channel TrenchMOS FETs. The series utilizes advanced trench gate technology to minimize on-resistance while maintaining high breakdown voltage capabilities. These devices are engineered specifically for the rigorous demands of automotive electronics and industrial power management systems.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Cross-reference pinouts and thermal characteristics when replacing components in existing layouts.
