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Product Detailed Parameters
- Description：N-CHANNEL TRENCHMOS LOGIC LEVEL
- Series：*
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The BUK7618-55/C,118 is an N-channel TrenchMOS standard level MOSFET manufactured by Nexperia. It utilizes High-Performance Automotive (HPA) technology and is designed for demanding environments with a maximum junction temperature rating of 175 °C. The device features a D2PAK-3 (TO-263-3) surface-mount package. Key electrical parameters include a drain-source voltage (VDS) of 55 V, a continuous drain current (ID) of 140 A, and a maximum on-resistance (RDSon) of 1.8 mΩ at 10 V gate drive. It operates within a temperature range of -55 °C to +175 °C.
Feature Summary
- Compliant with AEC-Q101 standards for automotive critical applications
- Capable of operation in thermally demanding environments up to 175 °C
- Suitable for standard level gate drive sources
Applications
- Automotive systems
- DC-to-DC converters
- Engine management
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific suffix '/C' against official Nexperia documentation to confirm if it denotes a specific tape-and-reel packaging variant or environmental compliance status distinct from the base part number. Ensure the ordering information matches the required package style and quantity specifications provided in the manufacturer's catalog.
Selection Notes
Select this component for high-current automotive applications requiring robust thermal performance and low conduction losses. The 1.8 mΩ RDSon supports efficient power handling, while the 175 °C rating allows for reliable operation in high-heat zones. Confirm that the system's gate drive voltage aligns with the standard level requirements for optimal switching characteristics.
Part Context
This part belongs to Nexperia's BUK76 series of N-channel TrenchMOS FETs. These devices are engineered using advanced trench technology to deliver high performance in automotive-grade packages. The series is characterized by low on-resistance and high current capability, making it suitable for various power switching tasks in vehicle electronics.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Cross-reference pinouts, package dimensions, and electrical ratings such as VDS, ID, and RDSon when evaluating alternative components.
