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The BUK7618-55,118 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK (SOT404) plastic package. Designed for automotive critical applications, it complies with AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 55 V and a continuous drain current of 57 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 18 mΩ at 25 °C and supports a total power dissipation of 125 W.
Verify the specific ordering suffix
Select this component for designs requiring an N-channel MOSFET rated for 55 V and high current handling up to 57 A. Ensure thermal management accommodates the 125 W dissipation capability. Confirm compatibility with standard level gate drive sources as specified in the product profile.
This part belongs to Nexperia's BUK761 series of N-channel TrenchMOS standard level FETs. It is housed in the SOT404 (D2PAK) surface-mounted package, which provides a mounting base connected to the drain for efficient heat dissipation. The series is engineered for robust performance in demanding environments.
Consult official Nexperia documentation for qualified substitutes. Verify pinout compatibility and electrical parameter alignment before substitution.
The maximum non-repetitive drain-source avalanche energy is 125 mJ under specified conditions.
The datasheet does not explicitly mention I_OFF circuitry or partial power-down support for this specific part number.