BUK7618-55,118

BUK7618-55,118

$0.45
  • Description:MOSFET N-CH 55V 57A D2PAK
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)

SKU:97c32d4adaf6 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 55V 57A D2PAK
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:18mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±16V
  • Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):125W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK7618-55,118

Overview

The BUK7618-55,118 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK (SOT404) plastic package. Designed for automotive critical applications, it complies with AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 55 V and a continuous drain current of 57 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 18 mΩ at 25 °C and supports a total power dissipation of 125 W.

Feature Summary

  • AEC-Q101 compliant for automotive reliability
  • Electrostatically robust due to integrated protection diodes
  • Low conduction losses resulting from low on-state resistance

Applications

  • Automotive power switching
  • General purpose power switching

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for designs requiring an N-channel MOSFET rated for 55 V and high current handling up to 57 A. Ensure thermal management accommodates the 125 W dissipation capability. Confirm compatibility with standard level gate drive sources as specified in the product profile.

Part Context

This part belongs to Nexperia's BUK761 series of N-channel TrenchMOS standard level FETs. It is housed in the SOT404 (D2PAK) surface-mounted package, which provides a mounting base connected to the drain for efficient heat dissipation. The series is engineered for robust performance in demanding environments.

Replacement Considerations

Consult official Nexperia documentation for qualified substitutes. Verify pinout compatibility and electrical parameter alignment before substitution.

FAQ

What is the maximum non-repetitive drain-source avalanche energy?

The maximum non-repetitive drain-source avalanche energy is 125 mJ under specified conditions.

Is the device suitable for partial power-down applications?

The datasheet does not explicitly mention I_OFF circuitry or partial power-down support for this specific part number.

BUK7618-55,118BUK7618-55,118
$0.45
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