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Product Detailed Parameters
- Description：MOSFET N-CH 75V 53A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：23mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2385 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：138W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK7623-75A,118 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 75 V and a continuous drain current of 53 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 23 mΩ at 25 °C and 49 mΩ at 175 °C junction temperature. Total power dissipation reaches 138 W at 25 °C. It supports a peak drain current of 213 A and operates within a junction temperature range of -55 °C to +175 °C.
Feature Summary
- Compliant with AEC-Q101 automotive standards for critical applications
- Optimized low conduction losses through reduced on-state resistance
- Compatible with standard level gate drive sources
- Designed for thermally demanding environments with a 175 °C rating
Applications
- 12 V, 24 V and 42 V loads
- Automotive and general purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring robust N-channel switching with high current handling capabilities in automotive or industrial settings. Ensure the thermal management solution can dissipate up to 138 W at the specified mounting base temperature. Confirm that the gate drive voltage aligns with the standard level requirements to fully enhance the channel and minimize resistive losses during operation.
Part Context
This part belongs to the Nexperia BUK76xx series of N-channel TrenchMOS FETs. These devices are engineered for high-efficiency power switching applications. The D2PAK (SOT404) package provides a large thermal footprint, facilitating effective heat transfer from the die to the PCB copper area. This series is widely used in power management modules where reliability under varying thermal conditions is essential.
Replacement Considerations
Check datasheets for alternative parts offering compatible 75 V ratings and similar current capacities. Verify pinout compatibility with the SOT404 package. Ensure replacement components meet the same AEC-Q101 qualification if used in automotive contexts. Compare thermal resistance values to maintain equivalent heat dissipation performance.
