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Product Detailed Parameters
- Description：MOSFET N-CH 60V 120A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：140 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：10170 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：324W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK762R6-60E is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in a D2PAK (SOT404) surface-mount package. It features a drain-source voltage of 60 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 2.6 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 324 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- AEC-Q101 compliant for high-performance automotive applications
- Repetitive avalanche rated for robustness
- Suitable for thermally demanding environments with a 175 °C rating
- True standard level gate with threshold voltage greater than 1 V at 175 °C
Applications
- 12 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and availability status. Confirm that the requested quantity aligns with manufacturer reel specifications. Ensure design reviews account for the absolute maximum ratings provided in the datasheet to prevent device stress. Cross-reference the latest product data sheet version before finalizing procurement orders.
Selection Notes
Select this component for circuits requiring high current handling in automotive environments. The low on-state resistance minimizes conduction losses during operation. Verify thermal management strategies to maintain junction temperatures within safe limits. Ensure gate drive voltages meet the standard level requirements for optimal switching performance. Consider the package thermal resistance when designing heat dissipation paths.
Part Context
This part belongs to the Nexperia BUK76 series of N-channel TrenchMOS FETs. These devices are engineered for automotive reliability and high-power switching applications. The series utilizes advanced trench gate technology to achieve low resistance and fast switching speeds. The D2PAK package provides efficient thermal transfer to the printed circuit board mounting base.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Ensure any replacement matches the pinout, voltage ratings, and thermal characteristics. Verify compatibility with existing PCB footprints and thermal designs.
