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Product Detailed Parameters
- Description：BUK7635-100 - N-CHANNEL TRENCHMO
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：41A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：35mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2535 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：149W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK7635-100A,118 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a SOT404 (D2PAK) plastic package. Designed for automotive critical applications, it complies with AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 100 V and a continuous drain current of 41 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, specified as 135 mΩ typical at 25 °C and 88 mΩ maximum at 175 °C junction temperature under 10 V gate drive. Total power dissipation reaches 149 W at 25 °C. It supports non-repetitive avalanche energy of 110 mJ and operates within a junction temperature range of -55 °C to 175 °C.
Feature Summary
- Compliant with AEC-Q101 automotive qualification standards for critical applications.
- Low conduction losses achieved through low on-state resistance characteristics.
- Compatible with standard level gate drive sources for simplified circuit design.
- Rated for thermally demanding environments with a maximum junction temperature of 175 °C.
Applications
- Power switching for 12 V, 24 V, and 42 V loads
- Automotive and general purpose power switching systems
- Control circuits for motors, lamps, and solenoids
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring robust N-channel switching with high current capacity up to 41 A. Ensure thermal management strategies account for the 149 W power dissipation rating at 25 °C mounting base temperature. Verify that the gate drive voltage aligns with the standard level requirements to maintain optimal on-state resistance performance across the operating temperature range.
Part Context
This part belongs to Nexperia's BUK76xx series of standard level N-channel TrenchMOS FETs. These devices are engineered for high-performance automotive applications, offering a balance of low static resistance and ruggedness. The D2PAK package provides efficient heat dissipation capabilities suitable for surface-mount assembly in compact automotive electronic control units and power distribution modules.
Replacement Considerations
Consult official Nexperia documentation for qualified substitutes. Cross-reference pinout compatibility and electrical limits such as VDS, ID, and RDSon before substitution.
FAQ
What is the maximum non-repetitive drain-source avalanche energy?
The device can withstand a non-repetitive drain-source avalanche energy of 110 mJ under specified conditions (ID = 25 A, Vsup ≤ 100 V).
How does the on-state resistance vary with temperature?
The drain-source on-state resistance increases with temperature. It is typically 135 mΩ at 25 °C and has a maximum specification of 88 mΩ at 175 °C junction temperature under test conditions of VGS = 10 V and ID = 25 A.
