BUK7635-55A,118

$1.11

Description：MOSFET N-CH 55V 35A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT),Bulk

SKU:6053d4bcfb08 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 35A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT),Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：872 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：85W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK7635-55A,118

Overview

The BUK7635-55A is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK plastic package. It features a drain-source voltage of 55 V and a continuous drain current of 35 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 35 mΩ at VGS = 10 V and ID = 20 A. Qualified to AEC-Q101 standards, it supports junction temperatures up to 175 °C with a total power dissipation of 85 W.

Feature Summary

Compliant with AEC-Q101 automotive qualification standards for critical applications
Low conduction losses achieved through low on-state resistance characteristics
Compatible with standard level gate drive sources for simplified circuit design
Operates in thermally demanding environments with a 175 °C junction temperature rating

Applications

12 V and 24 V load switching
Automotive and general purpose power switching
Motor control circuits
Lamp and solenoid drivers

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel configuration. Confirm that the component status remains active as product lifecycles may change. Ensure the D2PAK package variant aligns with the designated footprint requirements for the target printed-circuit board assembly process.

Selection Notes

Select this component when designing circuits requiring robust performance in automotive or industrial environments. The standard level gate drive compatibility simplifies interface requirements with common logic controllers. The high thermal rating allows for reliable operation under significant heat stress without requiring excessive external cooling infrastructure.

Part Context

This part belongs to Nexperia's TrenchMOS family of standard level N-channel enhancement mode FETs. These devices are engineered to provide efficient power switching solutions across various electronic systems. The D2PAK package provides a balance between thermal performance and surface-mount convenience for medium-power applications.