BUK763R4-30,118

$0.69

Description：MOSFET N-CH 30V 75A D2PAK
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Bulk

SKU:964912d836bd Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 75A D2PAK
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：75 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4951 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：255W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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BUK763R4-30,118

Overview

The BUK763R4-30,118 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK (SOT404) plastic package. It features a drain-source voltage of 30 V and a continuous drain current of 75 A at a mounting base temperature of 25 °C. The device exhibits a maximum on-state resistance of 3.4 mΩ at 25 °C and supports junction temperatures up to 175 °C. Total power dissipation reaches 255 W under specified thermal conditions.

Feature Summary

Compliant with AEC Q101 automotive qualification standards for critical applications
Compatible with standard level gate drive sources
Rated for thermally demanding environments with a 175 °C maximum junction temperature

Applications

12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging configuration and reel specifications. Ensure the component matches the required SOT404 package outline dimensions. Confirm RoHS compliance status through the manufacturer's latest product data sheet before finalizing procurement orders.

Selection Notes

Select this component for circuits requiring robust performance in automotive environments where standard level gate drive compatibility is necessary. Evaluate thermal management requirements carefully, as continuous current capability decreases significantly as mounting base temperature increases beyond 25 °C. Consider the low on-state resistance for minimizing conduction losses in high-current switching paths.

Part Context

This part belongs to the Nexperia BUK763 series of N-channel TrenchMOS FETs designed for general-purpose power switching. The series utilizes advanced trench technology to achieve low on-state resistance within a compact surface-mount package. These devices are engineered to meet automotive reliability standards while providing efficient power control solutions.

Replacement Considerations

BUK763R4-30B

FAQ

What is the maximum non-repetitive drain-source avalanche energy rating?

The device can withstand a non-repetitive drain-source avalanche energy of 1.3 J when tested at an initial junction temperature of 25 °C with a drain current of 75 A.