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The BUK764R0-40E is a standard level N-channel MOSFET utilizing TrenchMOS technology in a D2PAK (SOT404) package. It features a drain-source voltage of 40 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 4 mΩ at 25 °C and 10 V gate drive. Total power dissipation reaches 182 W under specified conditions, with a junction temperature range from -55 °C to 175 °C. It includes an integrated body diode and is rated for repetitive avalanche energy.
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Select this component for automotive circuits requiring standard level gate drive compatibility and high thermal stability. The true standard level gate ensures reliable operation even at elevated junction temperatures. Ensure adequate heatsinking or PCB copper area to manage the 182 W total power dissipation capability effectively within the system's thermal constraints.
This part belongs to Nexperia's High-Performance Automotive (HPA) TrenchMOS family. It is designed specifically for critical automotive applications where reliability and thermal performance are paramount. The SOT404 package provides a low thermal resistance path from junction to mounting base, facilitating efficient heat transfer in compact designs.
Check pinout compatibility and electrical parameters against alternatives like BUK762R0-40E. Verify that replacement devices meet the same AEC-Q101 qualification standards and support the required 175 °C operating temperature for direct substitution in existing automotive designs.
Yes, it is qualified to AEC-Q101 and supports a junction temperature up to 175 °C, making it suitable for thermally demanding automotive applications.
The device is rated for non-repetitive drain-source avalanche energy of 302 mJ under specified test conditions.