BUK764R4-60E,118

$2.24

Description：MOSFET N-CH 60V 100A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7960f0ce04e0 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 100A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：82 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6230 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：234W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK764R4-60E,118

Overview

The BUK764R4-60E,118 is a standard level N-channel MOSFET utilizing TrenchMOS technology in a D2PAK (SOT404) package. It features a drain-source voltage of 60 V and a continuous drain current of 100 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 4.5 mΩ at 10 V gate drive and 25 A. Total power dissipation reaches 234 W under specified conditions. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

AEC-Q101 compliant for high performance automotive applications
Repetitive avalanche rated for robust operation
Suitable for thermally demanding environments with 175 °C rating
True standard level gate with threshold voltage greater than 1 V at 175 °C

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable automotive qualification standards relevant to the target system. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values provided in the datasheet.

Selection Notes

Select this component for applications requiring high current handling in automotive environments. Evaluate the gate charge characteristics against driver capabilities to ensure efficient switching. Consider the thermal resistance parameters when designing heat dissipation solutions for the D2PAK package.

Part Context

This part belongs to Nexperia's TrenchMOS family of standard level N-channel MOSFETs. It is designed specifically for high-performance automotive applications requiring reliability under harsh thermal conditions. The device integrates advanced trench technology to minimize conduction losses while maintaining robust avalanche ruggedness.