BUK766R0-60E,118

$1.84

Description：MOSFET N-CH 60V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9898d2661771 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：62 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4520 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：182W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK766R0-60E,118

Overview

The BUK766R0-60E,118 is a standard level N-channel MOSFET utilizing TrenchMOS technology in a D2PAK (SOT404) package. Designed for high-performance automotive applications, it meets AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 60 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 6 mΩ at 25 °C and 13 mΩ at 175 °C junction temperature. Total power dissipation reaches 182 W under specified conditions, with a junction temperature range spanning -55 °C to 175 °C.

Feature Summary

Compliant with AEC-Q101 qualification standards for automotive reliability
Rated for repetitive avalanche operation to handle transient energy events
Maintains true standard level gate threshold characteristics exceeding 1 V at elevated temperatures up to 175 °C

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component version aligns with the latest product data sheet revisions. Ensure design compatibility with the SOT404 footprint dimensions and thermal management requirements specified in the datasheet. Cross-reference marking codes to validate authenticity upon receipt.

Selection Notes

Select this component when designing circuits requiring robust automotive-grade N-channel switching capabilities. The low on-state resistance supports efficient power handling in thermally demanding environments. Verify that the gate drive voltage aligns with the standard level threshold specifications. Consider the thermal resistance values when calculating heat dissipation for the target application load.

Part Context

This part belongs to Nexperia's TrenchMOS family of standard level N-channel MOSFETs. It is housed in the D2PAK plastic surface-mounted package, also designated as SOT404. The series is engineered specifically for high-performance automotive electronics, offering enhanced ruggedness and thermal stability compared to general-purpose counterparts.