BUK78150-55A/CUF

$0.59

Description：MOSFET N-CH 55V 5.5A SOT223
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:dc185c7c0486 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 5.5A SOT223
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：150mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：230 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

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BUK78150-55A/CUF

Overview

The BUK78150-55A/CUF is an N-channel TrenchMOS standard level FET in a SOT223 package. It features a drain-source voltage of 55 V and a continuous drain current of 5.5 A at 25 °C. The device has a maximum on-state resistance of 150 mΩ at 10 V gate drive and 25 °C, rising to 278 mΩ at 150 °C. Total power dissipation is 8 W at 25 °C. It operates within a junction temperature range of -55 °C to 150 °C and meets AEC-Q101 automotive standards.

Feature Summary

Low conduction losses due to low on-state resistance
Q101 compliant for automotive critical applications
Suitable for standard level gate drive sources

Applications

12 V and 24 V loads
Automotive and general purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific suffix 'CUF' against official Nexperia documentation to confirm exact packaging details, as datasheets may reference generic SOT223 or SC-73 forms without specifying reel or cut tape configurations. Ensure the component matches the required automotive qualification status and thermal performance characteristics for the intended circuit design before finalizing procurement orders.

Selection Notes

Select this component for applications requiring robust N-channel switching with low conduction losses. The standard level gate drive compatibility simplifies driver circuit design. Verify that the thermal management solution can handle the specified power dissipation limits, particularly at elevated junction temperatures, to ensure reliable operation within the defined safe operating area.

Part Context

This part belongs to the Nexperia BUK78150 series of N-channel TrenchMOS FETs. The series utilizes TrenchMOS technology to achieve low on-state resistance. The product is designed and qualified according to AEC standards, making it suitable for demanding automotive environments where reliability and thermal performance are critical requirements.