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Product Detailed Parameters
- Description：MOSFET N-CH 55V 5.5A SOT223
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：150mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：230 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SC-73
- Package / Case：TO-261-4, TO-261AA
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Overview
The BUK78150-55A is an N-channel TrenchMOS standard level enhancement mode Field-Effect Transistor (FET) designed for automotive critical applications. It operates with a drain-source voltage of 55 V and a continuous drain current of 5.5 A at 25 °C. The device features a low on-state resistance of 150 mΩ maximum at 25 °C and 278 mΩ maximum at 150 °C, both measured at a gate-source voltage of 10 V and a drain current of 5 A. Total power dissipation reaches 8 W at a solder point temperature of 25 °C. The component utilizes a SOT-223 plastic surface-mounted package.
Feature Summary
- Low conduction losses achieved through minimized on-state resistance
- Qualified to the AEC-Q101 standard for automotive reliability
- Compatible with standard level gate drive sources
Applications
- Switching 12 V loads
- Switching 24 V loads
- Automotive power switching circuits
- General purpose power switching
- Motor control applications
- Lamp driving circuits
- Solenoid actuation
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as tape width or reel size. Confirm that the requested part number matches the exact electrical specifications required for the target application. Ensure compliance with the stated absolute maximum ratings during design validation. Check for any recent revision history updates that may affect pinning or thermal characteristics before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring robust performance in 12 V or 24 V automotive environments. The standard level gate drive compatibility simplifies interface requirements with common logic controllers. Evaluate the thermal resistance from junction to ambient to ensure adequate heat sinking for the intended power dissipation levels. Consider the avalanche ruggedness rating if the application involves inductive load switching without external clamping protection.
Part Context
This device belongs to the TrenchMOS family of N-channel FETs manufactured by Nexperia. It is specifically engineered to meet the stringent qualification standards required for automotive electronics. The product utilizes advanced trench technology to optimize the balance between conduction losses and switching performance within a compact surface-mount footprint suitable for high-volume manufacturing processes.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pin configurations and thermal characteristics carefully when considering generic replacements.
