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Product Detailed Parameters
- Description：MOSFET N-CH 55V 3.5A SOT223
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：80mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：8.3W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-223
- Package / Case：TO-261-4, TO-261AA
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Overview
The BUK7880-55/CUF is an N-channel TrenchMOS standard level FET in a SOT223 package. It features a drain-source voltage of 55 V and a continuous drain current of 7.5 A at 25 °C. The on-state resistance is 65 mΩ typ (80 mΩ max) at VGS = 10 V and ID = 5 A. Total power dissipation is 8.3 W at 25 °C. Gate-source voltage limits are ±16 V. Avalanche energy capability is 30 mJ. Thermal resistance from junction to solder point is 12 K/W typ.
Feature Summary
- AEC-Q101 compliant for automotive critical applications
- Integrated protection diodes provide electrostatic robustness
- Low conduction losses due to low on-state resistance
Applications
- Automotive power switching
- General purpose power switching
Procurement Notes
Verify the specific suffix 'CUF' against official Nexperia ordering lists, as datasheets reference 'BUK7880-55/CU'. Confirm RoHS compliance status and REACH SVHC declarations directly with the manufacturer or authorized distributors before procurement.
Selection Notes
Select this component for designs requiring 55 V blocking capability and high thermal efficiency in compact SOT223 footprints. Ensure gate drive voltages remain within the ±16 V absolute maximum rating to prevent breakdown. Consider the 12 K/W junction-to-solder thermal resistance for PCB layout optimization.
Part Context
This device belongs to the BUK7880 series of N-channel enhancement mode MOSFETs utilizing TrenchMOS technology. It is designed for plastic surface-mounted packages with increased heatsink capabilities, targeting automotive and industrial power switching environments where reliability and low conduction losses are prioritized.
Replacement Considerations
Check Nexperia's official replacement guides for updated equivalents. Verify pinout compatibility and electrical parameters such as RDS(on) and VDS when substituting.
