BUK7905-40AI,127

Description：MOSFET N-CH 40V 75A TO220-5
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:459a887df238 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 75A TO220-5
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：127 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5000 pF @ 25 V
FET Feature：Current Sensing
Power Dissipation (Max)：272W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220-5
Package / Case：TO-220-5

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BUK7905-40AI,127

Overview

The BUK7905-40AI is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features an integrated current sensor within the TO-220 (SOT263B) package, designed for automotive critical applications compliant with AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 40 V and a continuous drain current of 155 A at 25 °C mounting base temperature. The typical on-state resistance is 5 mΩ at 25 °C, rising to 9.5 mΩ at 175 °C. Total gate charge is typically 120 nC.

Feature Summary

Integrated current sensing capability reduces component count
Qualified to AEC-Q101 for automotive reliability
Low conduction losses due to low on-state resistance
Compatible with standard level gate drive sources

Applications

Electrical Power Assisted Steering (EPAS)
Variable Valve Timing for engines

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when high current handling and precise current monitoring are required in automotive environments. The integrated sense pin simplifies protection circuitry design by eliminating external shunt resistors. Ensure thermal management accounts for the junction-to-mounting base resistance and power dissipation limits under varying ambient conditions.

Part Context

This device belongs to Nexperia's TrenchPLUS series of N-channel MOSFETs. It combines standard logic-level gate drive compatibility with advanced current sensing features. The product is specifically engineered for robust performance in demanding automotive systems where space efficiency and reliability are critical constraints.