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Product Detailed Parameters
- Description：MOSFET N-CH 40V 75A TO220-5
- Series：TrenchPLUS
- Mfr：NXP USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.1mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：83 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6808 pF @ 25 V
- FET Feature：Temperature Sensing Diode
- Power Dissipation (Max)：272W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-5
- Package / Case：TO-220-5
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Overview
BUK794R1-40BT,127 is a dual N-channel Power MOSFET manufactured by NXP Semiconductors. It features a drain-source breakdown voltage (Vds) of 40 V and a continuous drain current (Id) of 135 A at 10°C case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 1.6 mΩ at a gate-source voltage (Vgs) of 10 V. Packaged in an LFPAK56D-8 surface-mount housing, it operates within a junction temperature range of -55°C to +175°C. Key electrical parameters include a gate charge of 48 nC and a gate-source threshold voltage of 2.1 V.
Feature Summary
- Dual configuration providing two independent N-channel channels within a single package for space-efficient designs.
- Low on-resistance characteristic enabling high-efficiency power switching with minimal conduction losses.
- Robust thermal performance supported by the LFPAK56D-8 package, suitable for high-current applications.
Applications
- Motor control systems requiring efficient switching of DC loads.
- Power management circuits in industrial automation equipment.
- High-current load switching in automotive electronics.
Procurement Notes
Verify the specific suffix '127' against official NXP documentation to confirm tape-and-reel packaging specifications. Ensure the ordering part number matches the exact electrical ratings and package variant required for your design. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement.
Selection Notes
Select this component when a dual N-channel MOSFET solution is needed for 40 V systems handling currents up to 135 A. The low Rds(on) value makes it suitable for applications prioritizing efficiency. Verify that the LFPAK56D-8 footprint aligns with your PCB layout constraints and thermal management strategy.
Part Context
The BUK794R1 series belongs to NXP's range of low-voltage, high-current Power MOSFETs designed for robust power switching. These devices are engineered for applications demanding high reliability and efficient thermal dissipation. The dual-channel architecture allows for compact implementation in bridge configurations or parallel switching scenarios.
Replacement Considerations
Consult official NXP substitution guides for verified alternatives. Generic equivalents may not match the specific Rds(on), thermal resistance, or package dimensions. Ensure any substitute maintains compatibility with the 40 V rating and 135 A current capability.
