BUK7D25-40EX

$0.39

Description：MOSFET N-CH 40V 8A DFN2020MD-6
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:cfad4c7a01b4 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 8A DFN2020MD-6
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：25mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：460 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：15W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DFN2020MD-6
Package / Case：6-UDFN Exposed Pad

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BUK7D25-40EX

Overview

The Nexperia BUK7D25-40EX is an N-channel enhancement mode MOSFET utilizing Trench technology in a DFN2020MD-6 (SOT1220) package. It features a drain-source voltage of 40 V and a continuous drain current of 19 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 25 mΩ at VGS = 10 V and ID = 8 A. Total power dissipation reaches 15 W at 25 °C case temperature. Junction temperature extends to 175 °C, with thermal resistance from junction to ambient at 66 K/W in free air.

Feature Summary

AEC-Q101 qualified for automotive reliability
Side wettable flanks enable optical solder inspection
Ultra-thin leadless surface-mount design

Applications

Relay driver circuits
High-speed line drivers
Low-side load switches
General switching applications

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging configuration. Confirm that the component meets RoHS compliance standards required by your manufacturing process. Ensure the procurement channel sources directly from authorized distributors to guarantee authenticity and traceability of the semiconductor material.

Selection Notes

Select this component when a compact footprint is required alongside high thermal performance. The low on-resistance supports efficient power handling in space-constrained designs. Verify that the gate drive voltage aligns with the specified threshold characteristics for optimal switching performance in the target application environment.

Part Context

This part belongs to the Nexperia BUK7 series of N-channel MOSFETs. It utilizes advanced TrenchMOS technology to achieve low conduction losses within a small plastic thermal enhanced ultra thin small outline package. The device is designed for robust operation in demanding environments requiring extended temperature ranges.