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Product Detailed Parameters
- Description：MOSFET N-CH 55V 75A I2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：37 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2.604 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：157W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
The BUK7E11-55B,127 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 55 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 11 mΩ at 25 °C and 22 mΩ at 175 °C junction temperature. Total power dissipation reaches 157 W at 25 °C. It supports a junction temperature range from -55 °C to 175 °C and includes non-repetitive avalanche energy capability of 173 mJ.
Feature Summary
- AEC Q101 compliant for automotive critical applications
- Low conduction losses due to low on-state resistance
- Suitable for standard level gate drive sources
- Operates in thermally demanding environments with a 175 °C rating
Applications
- 12 V and 24 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring robust N-channel switching with standard logic-level gate drive compatibility. Ensure thermal management strategies account for the 157 W total power dissipation limit at 25 °C mounting base temperature. Verify that the application voltage does not exceed the 55 V drain-source breakdown rating under all operating conditions.
Part Context
This part belongs to the BUK7E series of N-channel TrenchMOS FETs manufactured by Nexperia. It utilizes the SOT226 (I2PAK) plastic package, which provides a mounting base connected to the drain for efficient heat dissipation. The device is designed to meet automotive reliability standards while offering high performance in power switching applications.
Replacement Considerations
Check datasheets for alternative parts within the BUK7E series or other N-channel MOSFETs with matching 55 V ratings and comparable RDS(on) values. Ensure pinout compatibility with the SOT226 package if direct replacement is required.
