BUK7E8R3-40E,127

$0.45

Description：NEXPERIA BUK7E8 - N-CHANNEL MOSF
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:911611abb188 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：NEXPERIA BUK7E8 - N-CHANNEL MOSF
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1730 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：96W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：I2PAK
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

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BUK7E8R3-40E,127

Overview

The BUK7E8R3-40E is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in an I2PAK (SOT226) plastic single-ended package. Designed for high-performance automotive applications, it meets the AEC-Q101 qualification standard. The device supports a drain-source voltage of 40 V and a continuous drain current of 75 A at a mounting base temperature of 25 °C. It features a maximum total power dissipation of 96 W under the same thermal conditions. Key electrical characteristics include a typical drain-source on-state resistance of 5.8 mΩ at 20 A and 10 V gate drive, with a maximum rating of 7.4 mΩ at 25 °C.

Feature Summary

AEC-Q101 compliant for automotive reliability
Repetitive avalanche rated for robust operation
Suitable for thermally demanding environments due to 175 °C junction temperature rating
True standard level gate with threshold voltage greater than 1 V at 175 °C

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging configuration. Confirm that the component status remains active or qualified for new designs before procurement. Ensure compatibility with the specified SOT226 footprint during PCB layout. Review the most recent product data sheet for any potential updates to specifications or legal disclaimers prior to finalizing orders.

Selection Notes

Select this component when a standard level N-channel MOSFET with high current capability is required for automotive environments. The 40 V rating and 75 A continuous current make it suitable for low-voltage power distribution. Consider the 175 °C junction temperature rating for applications requiring operation in high ambient heat. Verify that the gate drive voltage aligns with the standard level requirements for optimal on-state resistance performance.

Part Context

This part belongs to the Nexperia BUK7E series of N-channel TrenchMOS standard level FETs. These devices are engineered for automotive-grade reliability and performance. The series utilizes advanced trench technology to achieve low on-state resistance while maintaining robust avalanche capabilities. The I2PAK package provides efficient thermal management for high-power switching applications.