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The BUK7J2R4-80M is an automotive qualified N-channel MOSFET utilizing Trench 14 split-gate technology for ultra-low RDSon capability. It features a maximum drain-source voltage of 80 V and a typical on-state resistance of 2.4 mΩ at 25 °C. The device supports a continuous drain current of 231 A and total power dissipation of 294 W. It operates within a junction temperature range of -55 °C to 175 °C and is housed in an LFPAK56E (SOT1023) package.
Verify the specific ordering suffix 'M' against official Nexperia documentation to confirm the exact reel quantity and tape-and-reel specifications. Confirm that the LFPAK56E package variant matches the required footprint and soldering profile for the target assembly process. Ensure the component status is listed as production before finalizing design-in decisions.
Select this component when designing circuits requiring standard level gate drive compatibility alongside high current handling capabilities. The low on-state resistance minimizes conduction losses in power paths. Verify that the application environment remains within the specified -55 °C to 175 °C junction temperature limits to ensure long-term reliability and compliance with automotive qualification standards.
This part belongs to the Nexperia BUK7J series of automotive-grade N-channel MOSFETs. These devices are engineered using advanced Trench 14 technology to deliver superior performance in compact surface-mount packages. The series targets high-efficiency power management solutions where space constraints and thermal management are critical design factors.
Consult official Nexperia substitution guides or datasheets for verified equivalent parts. Do not assume pin-compatible replacements without verifying electrical parameters and package dimensions against the original specification.
The device utilizes Trench 14 split-gate technology, which reduces cell pitch to enhance power density and efficiency.
Yes, it is fully automotive qualified to AEC-Q101 and supports a junction temperature up to 175 °C.