BUK7K23-80EX

BUK7K23-80EX

$1.61
  • Description:MOSFET 2N-CH 80V 17A LFPAK56D
  • Series:-

SKU:9ccb0c476e86 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 80V 17A LFPAK56D
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):80V
  • Current - Continuous Drain (Id) @ 25°C:17A (Ta)
  • Rds On (Max) @ Id, Vgs:23mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:22.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1542pF @ 25V
  • Power - Max:53W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1205, 8-LFPAK56
  • Supplier Device Package:LFPAK56D
  • Grade:Automotive
  • Qualification:AEC-Q101

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BUK7K23-80EX

Overview

The Nexperia BUK7K23-80EX is a dual N-channel standard level MOSFET utilizing TrenchMOS technology within an LFPAK56D (SOT1205) package. Designed for high-performance automotive applications, it meets AEC-Q101 standards and supports junction temperatures up to 175 °C. Key electrical parameters include a drain-source voltage of 80 V, continuous drain current of 17 A at 25 °C, and a maximum on-state resistance of 23 mΩ at VGS = 10 V. The device features repetitive avalanche rating capability and includes integrated source-drain diodes.

Feature Summary

  • Dual MOSFET configuration in a single surface-mounted package
  • AEC-Q101 compliant for automotive reliability
  • Repetitive avalanche rated for robust operation
  • Suitable for thermally demanding environments with 175 °C rating

Applications

  • 12 V, 24 V and 48 V automotive systems
  • Motors, lamps and solenoid control
  • Transmission control
  • Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm packaging details such as reel or cut tape specifications. Confirm RoHS compliance status and REACH SVHC declarations prior to final procurement decisions. Ensure the component version matches the required automotive qualification standards for the intended application environment.

Selection Notes

Select this component for designs requiring dual N-channel isolation within a compact footprint. The 23 mΩ maximum RDS(on) supports efficient power handling at standard gate drive levels. Verify thermal management requirements based on the 2.84 K/W junction-to-mounting base thermal resistance. Ensure gate drive voltages align with the standard level threshold characteristics for optimal switching performance.

Part Context

This part belongs to Nexperia's BUK7K series of dual N-channel MOSFETs. It utilizes High-Performance Automotive TrenchMOS technology to deliver low on-resistance and fast switching speeds. The LFPAK56D package provides enhanced thermal dissipation capabilities compared to traditional plastic packages, making it suitable for space-constrained automotive PCB layouts.

Replacement Considerations

Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout compatibility and thermal resistance values when evaluating potential replacements. Ensure any substitute component maintains AEC-Q101 qualification if automotive reliability is required.

FAQ

What is the maximum junction temperature for the BUK7K23-80EX?

The maximum operating junction temperature is 175 °C.

Is the BUK7K23-80EX rated for repetitive avalanche events?

Yes, the device is repetitively avalanche rated.

What package type does the BUK7K23-80EX use?

It uses the LFPAK56D (SOT1205) plastic single-ended surface-mounted package.

BUK7K23-80EXBUK7K23-80EX
$1.61
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