BUK7K29-100E/1X

Description：MOSFET 100V 29.5A LFPAK56D
Series：-

SKU:6d8a48bec11e Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 100V 29.5A LFPAK56D
Series：-
Mfr：Nexperia USA Inc.
Package：Bulk
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：29.5A (Ta)
Rds On (Max) @ Id, Vgs：24.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：38.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2436pF @ 25V
Power - Max：68W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-1205, 8-LFPAK56
Supplier Device Package：LFPAK56D
Grade：Automotive
Qualification：AEC-Q101

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BUK7K29-100E/1X

Overview

The BUK7K29-100E is a dual N-channel standard level MOSFET utilizing TrenchMOS technology in an LFPAK56D (SOT1205) package. It features a drain-source voltage of 100 V and a continuous drain current of 29.5 A at 25 °C. The device has a maximum on-state resistance of 24.5 mΩ at VGS = 10 V and ID = 10 A. Total power dissipation reaches 68 W, with a junction temperature range from -55 °C to +175 °C. Gate charge is typically 38.1 nC.

Feature Summary

Dual MOSFET configuration within a single surface-mounted package
Qualified to AEC-Q101 automotive standards for high-performance applications
Rated for repetitive avalanche operation
Operates reliably in thermally demanding environments up to 175 °C

Applications

12 V, 24 V and 48 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging type and reel specifications. Ensure the component matches the required AEC-Q101 qualification status for your target application. Cross-reference the marking code '72910E' with the datasheet to authenticate the physical device upon receipt.

Selection Notes

Select this component when a dual N-channel solution is required for automotive or industrial power switching. The LFPAK56D package offers improved thermal performance compared to traditional SO-8 packages. Consider the 100 V rating and 29.5 A current capacity for low-side switching applications requiring robust avalanche ruggedness.

Part Context

This part belongs to the Nexperia BUK7K series of dual N-channel MOSFETs. These devices are designed using TrenchMOS technology to provide low on-resistance and fast switching speeds. The series is specifically targeted at automotive markets, offering compliance with stringent reliability standards such as AEC-Q101.