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The Nexperia BUK7M11-40HX is an automotive qualified N-channel MOSFET utilizing Trench 9 superjunction technology. It features a 40 V drain-source voltage rating and a maximum continuous drain current of 35 A at a mounting base temperature of 25 °C. The device exhibits a typical drain-source on-state resistance (RDSon) of 9.3 mΩ at VGS = 10 V and ID = 10 A. Total power dissipation reaches 50 W under the same thermal conditions. The component operates within a junction temperature range of -55 °C to +175 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging configuration. Confirm that the requested part number matches the LFPAK33 (SOT1210) plastic surface-mounted package variant. Ensure compliance with RoHS and REACH standards as specified in the product data sheet before finalizing procurement orders.
Select this component for designs requiring automotive qualification and operation up to 175 °C junction temperature. The LFPAK33 package supports high manufacturability through gull wing leads suitable for automated optical inspection. Evaluate PCB thermal design constraints, as practical current limits are determined by the application's thermal management capabilities rather than just the device ratings.
This device belongs to the Nexperia BUK7M series of standard level N-channel MOSFETs. It is designed specifically for high-performance automotive environments using advanced Trench 9 technology. The series targets applications demanding robust switching performance and high power density within compact surface-mount packages.
BUK7M10-40EX
Yes, the datasheet explicitly states that the device is repetitive avalanche rated.
The absolute maximum rating for gate-source voltage is ±20 V.