BUK7M27-80EX

$1.18

Description：MOSFET N-CH 80V 30A LFPAK33
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3c627acdf7ac Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 30A LFPAK33
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：27mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：19.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1306 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：62W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK33
Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)

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BUK7M27-80EX

Overview

The BUK7M27-80EX is an N-channel standard level MOSFET in an LFPAK33 (SOT1210) package using TrenchMOS technology. It features a drain-source voltage of 80 V, continuous drain current of 30 A at 25 °C mounting base temperature, and total power dissipation of 62 W. The device has a maximum on-state resistance of 27 mΩ at 25 °C and 68 mΩ at 175 °C. Gate-source threshold voltage ranges from 1 V to 4 V at 175 °C. Total gate charge is typically 19.5 nC. Avalanche energy rating is 28.3 mJ.

Feature Summary

Qualified to AEC-Q101 automotive standards for high-performance applications
Rated for repetitive avalanche operation
Operates in thermally demanding environments up to 175 °C junction temperature
Maintains true standard level gate drive capability with threshold voltage greater than 1 V at 175 °C

Applications

12 V, 24 V and 48 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix 'EX' against the manufacturer's official documentation to confirm packaging details such as tape and reel specifications. Confirm that the component matches the exact LFPAK33 (SOT1210) package outline dimensions provided in the datasheet. Ensure the part number corresponds to the production data sheet status rather than preliminary or objective development versions.

Selection Notes

Select this component for designs requiring automotive qualification and high thermal stability. The low on-state resistance supports efficient power switching in motor and solenoid control circuits. Verify that the gate drive source can accommodate the standard level gate requirements while maintaining functionality at elevated junction temperatures up to 175 °C.

Part Context

This device belongs to Nexperia's TrenchMOS family of N-channel enhancement mode field-effect transistors. It utilizes advanced trench technology to achieve low conduction losses within a compact plastic surface-mounted package. The product is specifically engineered to meet the rigorous reliability and environmental standards required for critical automotive electronic systems.

Replacement Considerations

Consult the official Nexperia replacement guide for verified substitute part numbers. Do not assume cross-compatibility with other N-channel MOSFETs based solely on similar voltage or current ratings without verifying pinout, package dimensions, and electrical characteristics.