ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 40V 80A LFPAK33
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
- Vgs (Max)：+20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds：3037 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：101W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK33
- Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)
Download product information
Overview
The BUK7M3R3-40HX is an automotive qualified N-channel MOSFET utilizing Trench 9 superjunction technology in an LFPAK33 (SOT1210) package. It features a drain-source voltage of 40 V and a maximum continuous drain current of 80 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 2.6 mΩ at VGS = 10 V and ID = 25 A, with a total power dissipation capability of 101 W. Key dynamic parameters include a total gate charge of 45 nC and a turn-off delay time of 19 ns. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Fully automotive qualified to AEC-Q101 standards for high performance applications
- Trench 9 superjunction technology provides low power losses and high power density
- LFPAK copper clip package ensures high robustness, reliability, and thermal performance
- Repetitive avalanche rated for enhanced ruggedness in demanding environments
Applications
- 12 V automotive systems
- Powertrain, chassis, body and infotainment applications
- Medium/Low power motor drive
- DC-DC systems
- LED lighting
Procurement Notes
Verify the specific ordering suffix 'HX' against the manufacturer's latest documentation to confirm packaging details such as reel size or tape specifications. Ensure that the component meets all relevant RoHS and REACH compliance requirements for your target market. Cross-reference the marking code '73H340' with incoming inspection protocols to authenticate genuine Nexperia products upon receipt.
Selection Notes
Select this component when designing circuits requiring high current handling within a compact surface-mount footprint. The low on-state resistance minimizes conduction losses in power switching applications. Consider the thermal resistance from junction to mounting base when calculating heat dissipation requirements for PCB layout. Verify that the gate drive voltage aligns with the specified threshold and on-state characteristics for optimal performance.
Part Context
This device belongs to Nexperia's BUK7M series of standard level N-channel MOSFETs designed for automotive use. It employs Trench 9 TrenchMOS technology to achieve superior efficiency compared to previous generations. The LFPAK33 package offers improved thermal conductivity and mechanical stability, making it suitable for space-constrained automotive electronics where reliability under thermal stress is critical.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. No direct substitute part numbers are confirmed in the provided source material.
