BUK7M5R0-40HX

$0.87

Description：MOSFET N-CH 40V 85A LFPAK33
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:10ec253f3958 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 85A LFPAK33
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：85A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：5mOhm @ 85A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：22 nC @ 10 V
Vgs (Max)：+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：83W
Operating Temperature：175°C
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK33
Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)

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BUK7M5R0-40HX

Overview

The BUK7M5R0-40HX is an N-channel standard level MOSFET in an LFPAK33 package using Trench 9 superjunction technology. It features a drain-source voltage of 40 V and a continuous drain current of 85 A at 25 °C mounting base temperature. The typical drain-source on-state resistance is 5 mΩ at VGS = 10 V and ID = 20 A. Total power dissipation reaches 83 W at 25 °C. The device operates within a junction temperature range of -55 °C to +175 °C.

Feature Summary

Fully automotive qualified to AEC-Q101 for high performance applications
Trench 9 superjunction technology provides low power losses and high power density
LFPAK copper clip package ensures high robustness, reliability, and gull wing leads for manufacturability
Repetitive avalanche rated for enhanced ruggedness

Applications

12 V automotive systems
Powertrain, chassis, body and infotainment applications
Medium/Low power motor drive
DC-DC systems
LED lighting

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging configuration and reel specifications. Confirm that the component meets all required environmental compliance standards, including RoHS and REACH regulations, prior to final procurement decisions.

Selection Notes

Select this component for designs requiring automotive qualification and high thermal stability up to 175 °C. Evaluate PCB thermal design constraints as practical current limits are often determined by the board layout rather than the device rating alone. Ensure gate drive voltages align with the standard level requirements for optimal RDSon performance.

Part Context

This part belongs to Nexperia's BUK7M series of N-channel TrenchMOS standard level FETs. These devices utilize advanced silicon technology to deliver high current capabilities in compact surface-mount packages. The series is specifically engineered to meet the rigorous demands of modern automotive electronics and power management systems.