ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 60V 14A LFPAK33
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：67mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：6.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：334 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：31W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK33
- Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)
Download product information
Overview
The BUK7M67-60EX is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK33 (SOT1210) plastic surface-mounted package. It features a drain-source voltage of 60 V and a continuous drain current of 14 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 67 mΩ at VGS = 10 V and ID = 5 A. Total power dissipation reaches 31 W under specified thermal conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Qualified to AEC-Q101 automotive standards for high-performance applications
- Capable of withstanding thermally demanding environments due to 175 °C junction temperature rating
- Features true standard level gate operation with threshold voltage exceeding 1 V at elevated temperatures
Applications
- 12 V automotive systems
- Motor, lamp, and solenoid control circuits
- Transmission control modules
- Ultra-high performance power switching
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the requested part number matches the exact electrical specifications required for the target application design. Cross-reference the datasheet revision date to ensure compliance with current product specifications before finalizing procurement orders.
Selection Notes
Select this component for designs requiring robust automotive-grade reliability and high thermal stability. The LFPAK33 package provides efficient heat dissipation suitable for power management tasks. Ensure the gate drive circuitry accommodates the standard level gate requirements and that the operating environment remains within the specified 175 °C junction temperature limit for optimal performance.
Part Context
This device belongs to Nexperia's TrenchMOS family of standard level N-channel MOSFETs. It is specifically engineered for automotive electronics where durability and thermal resilience are critical. The LFPAK33 package offers a compact footprint with enhanced thermal performance compared to traditional packages, making it ideal for space-constrained power switching applications.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameters and thermal characteristics against the original specification sheet.
