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Product Detailed Parameters
- Description：MOSFET N-CH 30V 75A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：31 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1773 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：105W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK7Y07-30B,115 is an N-channel TrenchMOS standard level FET utilizing High-Performance Automotive (HPA) technology. It features a drain-source voltage of 30 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 57 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 105 W at 25 °C. It operates within a junction temperature range of -55 °C to +175 °C and includes non-repetitive avalanche energy capability of 198 mJ.
Feature Summary
- Compliant with AEC-Q101 standards for automotive critical applications
- Optimized for low conduction losses through minimized on-state resistance
- Compatible with standard level gate drive sources
- Designed for thermally demanding environments with a 175 °C rating
Applications
- 12 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps, and solenoids
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring robust automotive-grade performance in low-voltage applications. The LFPAK package provides efficient thermal management for high-current scenarios. Ensure gate drive circuits align with standard level requirements to fully leverage the low on-resistance characteristics. Validate thermal constraints against the specified junction temperature limits during operation.
Part Context
This part belongs to Nexperia's BUK7Y series of N-channel TrenchMOS FETs. These devices are engineered using HPA technology to meet stringent automotive reliability standards. The series offers various voltage and current ratings packaged in LFPAK formats, balancing electrical performance with thermal efficiency for compact electronic designs.
Replacement Considerations
Check pinout compatibility and thermal resistance values when substituting. Verify that alternative parts meet the same AEC-Q101 qualification if used in automotive contexts. Ensure voltage and current ratings exceed or match the original specifications.
