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Product Detailed Parameters
- Description：MOSFET N-CH 100V 68A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：54.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3958 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：195W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK7Y15-100EX is an N-channel standard level MOSFET utilizing TrenchMOS technology, housed in the LFPAK56 (Power SO8; SOT669) surface-mount package. It features a drain-source voltage of 100 V and a continuous drain current of 68 A at a mounting base temperature of 25 °C. The device exhibits a maximum on-state resistance of 15 mΩ at VGS = 10 V and ID = 20 A. Total power dissipation reaches 195 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Qualified to AEC-Q101 automotive standards for high-performance applications
- Features true standard level gate drive with threshold voltage greater than 1 V at 175 °C
- Designed for thermally demanding environments with a 175 °C junction temperature rating
- Capable of handling repetitive avalanche energy events
Applications
- 12 V, 24 V, and 48 V automotive systems
- Motor, lamp, and solenoid control circuits
- Transmission control modules
- Ultra-high performance power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel or cut tape configuration. Ensure the requested part number matches the exact marking code '71510E' to guarantee authenticity. Confirm that the component meets the required AEC-Q101 qualification status for your specific application environment before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring robust automotive-grade reliability and high thermal stability. The standard level gate drive simplifies driver requirements while maintaining compatibility with typical logic levels. Consider the LFPAK56 package for its efficient heat dissipation characteristics suitable for mounting base temperatures up to 100 °C during operation.
Part Context
This device belongs to Nexperia's portfolio of TrenchMOS technology products designed for automotive markets. It utilizes silicon planar field-effect transistor structures optimized for low on-resistance and high switching efficiency. The LFPAK56 package provides a compact footprint with a dedicated mounting base connected to the drain for superior thermal management compared to traditional plastic packages.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives within the BUK7Y series. Cross-reference pinout configurations and thermal resistance values when evaluating potential replacements to ensure mechanical and electrical compatibility without modifying the existing PCB layout.
