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The BUK7Y15-60EX is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power SO8) package. It features a drain-source voltage of 60 V and a continuous drain current of 53 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 15 mΩ at 25 °C and 33.6 mΩ at 175 °C junction temperature. Total power dissipation reaches 94 W under specified conditions. The component supports a peak drain current of 212 A and operates within a junction temperature range of -55 °C to +175 °C.
Verify the specific suffix 'EX' against the official Nexperia datasheet for BUK7Y15-60E to confirm packaging variations or tape-and-reel specifications. Ensure the ordering code matches the required quantity format. Confirm RoHS compliance status through the manufacturer's latest documentation before finalizing procurement orders.
Select this component for designs requiring automotive-grade reliability and high thermal stability up to 175 °C. The low on-state resistance minimizes conduction losses in power switching circuits. Verify that the LFPAK56 package footprint aligns with the PCB layout constraints and that the gate charge characteristics suit the driving circuitry requirements.
This part belongs to the Nexperia BUK7Y series of N-channel MOSFETs designed for robust power management. The LFPAK56 package provides efficient thermal dissipation through a dedicated mounting base connected to the drain. The series utilizes advanced TrenchMOS technology to achieve low specific on-resistance while maintaining high breakdown voltage capabilities suitable for demanding electrical environments.
BUK7Y15-60E
The maximum operating junction temperature is 175 °C.
Yes, the BUK7Y15-60EX is rated for repetitive avalanche operation.