SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BUK7Y153-100EX is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power SO8) package. It features a drain-source voltage of 100 V and a continuous drain current of 9.4 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 153 mΩ at 25 °C and 424 mΩ at 175 °C junction temperature. Total power dissipation reaches 37.3 W at 25 °C. The component supports a junction temperature range from -55 °C to +175 °C and includes repetitive avalanche rating capabilities.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Ensure the requested part number matches the exact electrical characteristics and thermal ratings defined in the product data sheet before finalizing procurement orders.
Select this component for designs requiring robust automotive-grade reliability and high thermal tolerance up to 175 °C. The low on-state resistance minimizes conduction losses, while the standard level gate drive simplifies interface requirements with common logic controllers. Verify that the application's peak current demands remain within the specified safe operating area limits.
This device belongs to Nexperia's portfolio of TrenchMOS standard level N-channel MOSFETs. It is specifically engineered for automotive environments where durability under extreme thermal conditions is critical. The LFPAK56 package provides efficient heat dissipation through a dedicated mounting base connected to the drain terminal.
BUK7Y153-100E