BUK7Y153-100EX

BUK7Y153-100EX

$0.57
  • Description:MOSFET N-CH 100V 9.4A LFPAK56
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:b5b2d0c0f00d Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 100V 9.4A LFPAK56
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:9.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:153mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:9.4 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:497 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):37.3W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:LFPAK56, Power-SO8
  • Package / Case:SC-100, SOT-669

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BUK7Y153-100EX

Overview

The BUK7Y153-100EX is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power SO8) package. It features a drain-source voltage of 100 V and a continuous drain current of 9.4 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 153 mΩ at 25 °C and 424 mΩ at 175 °C junction temperature. Total power dissipation reaches 37.3 W at 25 °C. The component supports a junction temperature range from -55 °C to +175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

  • Qualified to the AEC-Q101 automotive standard for high-performance applications
  • Features true standard level gate drive with threshold voltage greater than 1 V at 175 °C
  • Rated for repetitive avalanche energy operation
  • Designed for thermally demanding environments with a 175 °C operating limit

Applications

  • 12 V, 24 V and 48 V Automotive systems
  • Motors, lamps and solenoid control
  • Transmission control
  • Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Ensure the requested part number matches the exact electrical characteristics and thermal ratings defined in the product data sheet before finalizing procurement orders.

Selection Notes

Select this component for designs requiring robust automotive-grade reliability and high thermal tolerance up to 175 °C. The low on-state resistance minimizes conduction losses, while the standard level gate drive simplifies interface requirements with common logic controllers. Verify that the application's peak current demands remain within the specified safe operating area limits.

Part Context

This device belongs to Nexperia's portfolio of TrenchMOS standard level N-channel MOSFETs. It is specifically engineered for automotive environments where durability under extreme thermal conditions is critical. The LFPAK56 package provides efficient heat dissipation through a dedicated mounting base connected to the drain terminal.

Replacement Considerations

BUK7Y153-100E

BUK7Y153-100EXBUK7Y153-100EX
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