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The BUK7Y19-100EX is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power SO8) package. It features a drain-source voltage of 100 V and a continuous drain current of 56 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 19 mΩ at VGS = 10 V and ID = 15 A. Total power dissipation reaches 169 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking codes. Confirm that the LFPAK56 package variant matches the required PCB footprint and thermal management strategy. Cross-reference the AEC-Q101 qualification status with project requirements before finalizing procurement decisions.
Select this component for designs requiring robust automotive-grade reliability and high current handling within a compact surface-mount form factor. The standard level gate drive simplifies driver circuit design by eliminating the need for specialized high-voltage gate drivers. Ensure adequate thermal dissipation paths are designed to support the 175 °C junction temperature capability.
This device belongs to Nexperia's TrenchMOS portfolio, engineered for efficiency and durability in critical electronic systems. The LFPAK56 package provides superior thermal performance compared to traditional plastic packages, facilitating effective heat transfer from the junction to the mounting base for sustained operation in high-power scenarios.
BUK7Y19-100E