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The BUK7Y1R0-40N is an automotive qualified N-channel MOSFET utilizing Trench 15 e-TBO technology in an LFPAK56 package. It features a drain-source voltage of 40 V and a maximum on-state resistance of 0.97 mΩ at 25 °C. The device supports a continuous drain current of 320 A and a peak pulsed current of 1465 A. Total gate charge is typically 135 nC, with a junction-to-mounting base thermal resistance of 0.48 K/W. It operates within a junction temperature range of -55 °C to 175 °C.
Verify the specific part number BUK7Y1R0-40N against the official Nexperia datasheet to confirm technical specifications and packaging details. Ensure that the ordering suffix matches the required variant, as suffixes may indicate differences in tape and reel configuration or marking codes. Confirm compliance with AEC-Q101 requirements if automotive qualification is mandatory for the intended application environment.
Select this component for applications requiring low conduction losses and high ruggedness in compact automotive designs. The LFPAK56 package offers superior thermal performance and mechanical stability compared to traditional QFN packages due to its gull wing leads and copper clip technology. Consider the tight VGS(th) limits when paralleling multiple units to ensure balanced current sharing and optimal system efficiency.
This device belongs to Nexperia's portfolio of automotive-grade power MOSFETs designed for demanding environments. It employs advanced Trench 15 e-TBO technology to achieve a balance between low on-resistance and high avalanche ruggedness. The LFPAK56 (SOT669) package is specifically engineered to handle high currents and thermal cycling stress, making it suitable for modern vehicle electrical architectures.
No public confirmed substitute part numbers are documented in the provided source material.