BUK7Y25-40B,115

$0.73

Description：MOSFET N-CH 40V 35.3A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a8ac66791ba4 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 35.3A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：35.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：12.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：693 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：59.4W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

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BUK7Y25-40B,115

Overview

The BUK7Y25-40B,115 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing Nexperia High-Performance Automotive TrenchMOS technology. It features a 40 V drain-source voltage rating and supports continuous drain currents up to 35.3 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 25 mΩ at VGS = 10 V and ID = 20 A. It operates within a junction temperature range of -55 °C to 175 °C and includes an integrated source-drain diode with a reverse recovery time of 33 ns.

Feature Summary

AEC-Q101 qualified for automotive critical applications
Compatible with standard level gate drive sources
Operates in thermally demanding environments up to 175 °C

Applications

12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for designs requiring automotive-grade reliability and high thermal tolerance. The LFPAK package provides efficient heat dissipation for power switching tasks. Ensure gate drive voltages align with the standard level requirements to optimize performance and minimize switching losses in motor or lamp control circuits.

Part Context

This part belongs to the BUK7Y series of N-channel TrenchMOS FETs designed by Nexperia. These devices are engineered for robust performance in automotive environments, combining low on-resistance with high avalanche energy capability. The SOT669 (LFPAK) package offers a compact footprint suitable for space-constrained printed circuit board layouts.